In-situ pre-clean for electroplating process

ABSTRACT

Embodiments of the invention generally provide a waveform to be applied to a seed layer prior to initiating plating operations, wherein the waveform is configured to remove organic contaminants from the seed layer. The application of the waveform generally includes applying a plurality of anodic pulses to the seed layer prior to an electrochemical deposition process and subsequent to the seed layer contacting a plating solution, and applying a cathodic pulse to the seed layer immediately following each of the plurality of anodic pulses. The waveform is generally provided by a power supply in electrical communication with a system controller configured to supply controlling signals to the power supply.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention generally relates to removal of organiccontaminants from a seed layer in an electroplating process.

[0003] 2. Description of the Related Art

[0004] Metallization for sub-quarter micron sized features is afoundational technology for present and future generations of integratedcircuit manufacturing processes. More particularly, in devices such asultra large scale integration-type devices, i.e., devices havingintegrated circuits with more than a million logic gates, the multilevelinterconnects that lie at the heart of these devices are generallyformed by filling high aspect ratio interconnect features with aconductive material, such as copper or aluminum, for example.Conventionally, deposition techniques such as chemical vapor deposition(CVD) and physical vapor deposition (PVD), for example, have been usedto fill these interconnect features. However, as interconnect sizesdecrease and aspect ratios increase, void-free interconnect feature fillvia conventional metallization techniques becomes increasinglydifficult. As a result thereof, plating techniques, such aselectrochemical plating (ECP) and electroless plating, for example, haveemerged as viable processes for filling sub-quarter micron sized highaspect ratio interconnect features in integrated circuit manufacturingprocesses.

[0005] In an ECP process, for example, sub-quarter micron sized highaspect ratio features formed into the surface of a substrate may beefficiently filled with a conductive material, such as copper, forexample. ECP plating processes are generally two stage processes,wherein a seed layer is first formed over the surface features of thesubstrate, and then the surface features of the substrate are exposed toan electrolyte solution, while an electrical bias is simultaneouslyapplied between the substrate and an anode positioned within theelectrolyte solution. The electrolyte solution is generally rich in ionsto be plated onto the surface of the substrate, and therefore, theapplication of the electrical bias causes these ions to be urged out ofthe electrolyte solution and to be plated onto the seed layer.

[0006] However, one challenge associated with ECP processes is that thesurface of the seed layer may become contaminated with organic materialbetween the time the seed layer is deposited and the time the seed layeris exposed to the electrolyte solution for plating, as the seed layer isgenerally deposited on the substrate in a separate chamber/apparatusfrom the plating system. Organic material contamination may thereforeresult, for example, from exposure of the seed layer to air in thetransfer process between a deposition chamber used to deposit the seedlayer and an ECP chamber. This organic material contamination posessignificant problems, as organic material contamination on the surfaceof the seed layer has been shown to affect plating uniformity in theareas above the organic contamination. Therefore, there is a need for anapparatus and method for removing organic contamination from the surfaceof a seed layer prior to the initiating an ECP process.

SUMMARY OF THE INVENTION

[0007] Embodiments of the invention generally provide a waveform to beapplied to a seed layer prior to initiating plating operations, whereinthe waveform is configured to remove organic contaminants from the seedlayer. The application of the waveform generally includes applying aplurality of anodic pulses to the seed layer prior to an electrochemicaldeposition process and subsequent to the seed layer contacting a platingsolution, and applying a cathodic pulse to the seed layer immediatelyfollowing each of the plurality of anodic pulses

[0008] Embodiments of the invention further provide a method forremoving organic contamination from a copper seed layer. The methodgenerally includes applying a cleaning waveform to the seed layer oncethe seed layer is immersed in an electrolyte solution. The cleaningwaveform generally includes at least one deposition pulse, and at leastone etch pulse, wherein the at least one deposition pulse has a longduration low magnitude positive current density, and wherein the atleast one etch pulse has a short duration high magnitude negativecurrent density.

[0009] Embodiments of the invention further provide a method forelectrochemically plating copper onto a seed layer, wherein the methodincludes immersing the seed layer in a plating solution while applyingan electrical loading bias to the seed layer. Thereafter, the methodincludes applying a cleaning waveform to the seed layer prior toinitiating plating operations, wherein the cleaning waveform includes aplurality of cathodic pulses, and a plurality of anodic pulses, theplurality of anodic pulses having a short duration and high currentdensity. Thereafter, the method initiates plating operations via theapplication of an electrical plating bias to the seed layer to platecopper thereon.

[0010] Embodiments of the invention further provide an electrochemicalplating cell, wherein the plating cell includes a plating cell containerconfigured hold a plating solution therein and a pivotally mounted lidmember configured to support a substrate on a lower surface thereof suchthat the substrate is in electrical communication with a contact ring.The plating cell further includes a power supply in electricalcommunication with the contact ring, the power supply being configuredto apply a plurality of anodic pulses to a seed layer deposited on thesubstrate prior to an electrochemical deposition process and subsequentto the seed layer contacting a plating solution and apply a cathodicpulse to the seed layer immediately following each of the plurality ofanodic pulses.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] So that the manner in which the above-recited features of thepresent invention are obtained may be understood in detail, a moreparticular description of the invention briefly summarized above may behad by reference to the embodiments thereof, which are illustrated inthe appended drawings. It is to be noted, however, that the appendeddrawings illustrate only exemplary embodiments of the invention, and aretherefore, not to be considered limiting of its scope, for the inventionmay admit to other equally effective embodiments.

[0012]FIG. 1 illustrates a perspective view of an exemplary platingsystem of the invention.

[0013]FIG. 2 illustrates a plan view of the exemplary plating systemillustrated in FIG. 1.

[0014]FIG. 2a illustrates a sectional view of an exemplary plating cellof the invention.

[0015]FIG. 3 illustrates an exemplary substrate processing recipeimplementing an embodiment of the cleaning method of the invention.

[0016] FIGS. 4A-4D illustrate exemplary cleaning pulse waveforms of theinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0017]FIG. 1 illustrates a perspective view of an exemplary platingsystem 100 of the invention. FIG. 2 illustrates a plan view of theexemplary plating system 100 illustrated in FIG. 1. As cooperativelyillustrated in FIGS. 1 and 2, plating system 100 may generally include aloading station 110, a thermal anneal chamber 111, a spin-rinse-dry(SRD) station 112, a mainframe 114, and an electrolyte replenishingsystem 120. Mainframe 114 generally includes a mainframe transferstation 116 and a plurality of processing stations 118. Each processingstation 118 may include one or more processing cells 140. A fluidreplenishing system 120 is generally positioned adjacent theelectroplating system 100 and individually in fluid communication withprocess cells 140 in order to circulate processing fluids thereto.System 100 also generally includes a control system 122, which may be aprogrammable microprocessor-type control system configured to interfacewith the various components of system 100 and provide controllingsignals thereto. Loading station 110 generally includes one or moresubstrate cassette receiving areas 124, generally termed pod loaders,one or more loading station transfer robots 128, and at least onesubstrate orientor 130. As such, a substrate cassette 132 containingsubstrates 134 may be loaded onto the substrate cassette receiving area124 in order to introduce substrates 134 into the electroplating system100. The loading station transfer robot 128 may transfer the substrates134 between the substrate cassette 132 and the substrate orientor 130.The substrate orientor 130 generally operates to position each substrate134 in a desired orientation to ensure that the substrate is properlyoriented and referenced for processing. The loading station transferrobot 128 may also transfer substrates 134 between the loading station110 and the SRD station 112, and between the loading station 110 and thethermal anneal chamber 111, for example, for processing.

[0018]FIG. 2a illustrates a sectional view of a plating cell 200 of theinvention. The electroplating cell 200 generally includes a containerbody 142 having an opening on a top portion of the container body 142 toreceive and support a lid 144. The container body 142 is preferably madeof an electrically insulative material, such as a plastic, Teflon, orceramic. The lid 144 serves as a top cover having a substrate supportingsurface 146 disposed on the lower portion thereof. A substrate 148 isshown in parallel abutment to the substrate supporting surface 146, andmay be secured in this orientation via conventional substrate chuckingmethods. The container body 142 is preferably cylindrically shaped inorder to accommodate the generally circular substrate 148 at one endthereof. However, other substrate shapes can be used as well.

[0019] An electroplating solution inlet 150 is disposed at the bottomportion of the container body 142. An electroplating solution may bepumped into the container body 142 by a suitable pump 151 connected tothe inlet 150. The solution may flow upwardly inside the container body142 toward the substrate 148 to contact the exposed deposition surface154. A consumable anode 156 may be disposed in the container body 142and configured to dissolve in the electroplating solution in order toprovide metal particles to be deposited onto the substrate 148 to theplating solution. The anode 156 generally does not extend across theentire width of the container body 142, thus allowing the electroplatingsolution to flow between the outer surface of the anode 156 and theinner surface of the container body 176 to the deposition surface 154.Alternatively, an anode 156 consisting of an electrode and consumablemetal particles may be encased in a fluid permeable membrane, such as aporous ceramic plate, to provide metal particles to be deposited ontothe substrate to the plating solution. A porous non-consumable anode mayalso be disposed in the container body 142 so that the electroplatingsolution may pass therethrough. However, when a non-consumable anode isincluded, the electroplating solution should include a metal particlesupply to continually replenish the metal particles to be deposited onthe substrate 148.

[0020] The container body 142 generally includes an egress gap 158bounded at an upper limit by a shoulder 164 of a cathode contact ring152. The gap 158 generally leads to an annular weir 143 that issubstantially coplanar with (or slightly above) the substrate seatingsurface 168, and thus, the deposition surface 154. The weir 143 ispositioned to ensure that the deposition surface 154 is in contact withthe electroplating solution when the electroplating solution is flowingout of the egress gap 158 and over the weir 143. During processing, thesubstrate 148 is secured to the substrate supporting surface 146 of thelid 144 by a plurality of vacuum passages 160 formed in the surface 146,wherein passages 160 are generally connected at one end to a vacuum pump(not shown). The cathode contact ring 152, which is shown disposedbetween the lid 144 and the container body 142, is connected to a powersupply 149 to provide power to the substrate 148. Power supply 149 maybe in electrical communication with system controller 122, which maycontrol the operation of power supply 149, i.e., controller 122 isgenerally configured to control the output of power supply in a timevarying manner, or alternatively, in a sensed or feedback-type ofcontrol system. The contact ring 152 generally has a perimeter flange162 partially disposed through the lid 144, a sloping shoulder 164conforming to the weir 143, and an inner substrate seating surface 168,which defines the diameter of the deposition surface 154. The shoulder164 is provided so that the inner substrate seating surface 168 islocated below the flange 162. This geometry allows the depositionsurface 154 to come into contact with the electroplating solution beforethe solution flows into the egress gap 158 as discussed above.

[0021] The substrate seating surface 168 preferably extends a minimalradial distance inward below a perimeter edge of the substrate 148, buta distance sufficient to establish electrical contact with a metal seedlayer on the substrate deposition surface 154. The exact inward radialextension of the substrate seating surface 168 may be varied accordingto application. However, in general this distance is minimized so that amaximum deposition surface 154 is exposed to the electroplatingsolution. In an exemplary embodiment, the radial width of the seatingsurface 168 is 2 mm from the edge.

[0022] In operation, system 100 may receive a cassette 132 in one ofsubstrate receiving areas 124, wherein the cassette 132 containssubstrates 134 having a conductive seed layer deposited thereon.Individual substrates 134 may be removed from cassette 132 by a robot128 for processing in system 100. The substrates 134 may be delivered toorienter 130, annealing chamber 111, and/or SRD chamber 112, as requiredprior to plating by the particular processing recipe. However, the seedlayer, which may have been deposited by a separate deposition apparatus,may have organic contamination on the surface thereof as a result of theseed layer being exposed to organic elements between the seed layerdeposition apparatus and system 100. As such, prior to initiatingplating operations on the substrate, embodiments of the presentinvention operate to remove the organic contamination from the surfaceof the substrate, so that the conductive metal layer deposited over theseed layer in the plating process will have optimum uniformitycharacteristics and be substantially free of defects.

[0023] The contamination removal process of the present inventiongenerally includes contacting the surface of the substrate having theseed layer deposited thereon with an electrolyte solution. This stepmay, for example, may include supporting a substrate in a face down-typeECP plating cell, and immersing the substrate surface in the electrolytesolution. During the immersion process, an electrical loading bias 301,which is illustrated in the loading portion 306 of the exemplary platingprocessing recipe 300 shown in FIG. 3, may be applied to the substratesurface, such that dissolution of the seed layer as a result of contactwith the electrolyte solution prior to initiating the plating processmay be minimized. Once the substrate surface is immersed the electrolytesolution, the processing recipe 300 may apply a cleaning pulse waveform302 to the substrate prior to initiating a plating process portion 305of the processing recipe 300. The cleaning pulse waveform 302 generallyincludes a series of alternating cathodic 303 and anodic pulses 304,which may, for example, be centered around the loading bias voltage 301,as illustrated in FIG. 3. The cleaning pulse waveform 302 may beconfigured to essentially etch the surface of the seed layer depositedon the substrate, so that contamination, and in particular, organiccontamination residing on the surface of the seed layer, may be removedtherefrom prior to initiating the plating process portion 305 of theprocessing recipe 300. However, it is to be noted that the amplitude andduration of cleaning pulse waveform 302 is specifically configured toremove only surface contamination from the seed layer, as it isundesirable to remove any significant quantity of the seed layer itself,as excess removal of the seed layer has been shown to facilitate unequalcurrent density distribution across the surface of the substrate duringplating operations, and therefore, and generate uneven platinguniformity.

[0024] The cleaning pulse waveform 302 illustrated in the exemplaryprocessing recipe 300 generally includes a sequence of alternatingcathodic 303 and anodic 304. Pulses 303 and 304 may be centered aroundthe load bias voltage 301, as illustrated in FIG. 3. Alternatively, therespective pulses may be of varying magnitudes and durations,independent of the load bias voltage. The individual cathodic pulses 303may be configured to be slightly greater in magnitude than the load biasvoltage 301, while the anodic pulses 304 may be substantially less inmagnitude than the load bias voltage 301, thus facilitating a slightetching of organic contamination from the substrate surface while notremoving a substantial portion of the seed layer. The individual pulsesmay have a duration of between about 5 milliseconds and about 50milliseconds, for example. For example, preferably the individual pulseduration may generally be between about 10 and about 20 milliseconds perpulse. Further, the total duration of the cleaning pulse waveform 302may be between about 10 milliseconds and about 100 milliseconds, forexample, and therefore, there may be between about 2 and 20 individualpulses in the cleaning pulse waveform 302. The magnitude of the negativeportion of the pulses may be up to about −0.5 volts (where −0.2 volts isassumed to be the etch crossover threshold), for example, and thecurrent density thereof may be between, for example, about 50 mA/cm² andabout 150 mA/cm². More particularly, the current density may be betweenabout 75 mA/cm² and about 125 mA/cm², and the duration of the anodicpulses may be between about 5 milliseconds and about 50 milliseconds.More particularly, the duration of the individual anodic pulses may bebetween about 10 milliseconds and about 20 milliseconds, for example.Similarly, the current density of the positive pulses may be up to about125 mA/Cm², for example, and may generally be in the range of about 75mA/cm² and about 125 mA/cm², and more particularly, between about 90mA/cm² and about 100 mA/cm², for example. The duration of the cathodicpulses is generally substantially longer than the duration of the anodicpulses. For example, the duration of the cathodic pulses may generallybe between about 10 milliseconds and about 150 milliseconds, dependingupon the duration of the anodic pulse. For example, if the duration ofthe anodic pulse is near the shorter into the range, ie., fivemilliseconds, then the duration of the cathodic pulse may also be nearthe shorter into the range, i.e., 10 milliseconds. Similarly, if theanodic pulse is longer, within the cathodic pulse will also generally belonger.

[0025] Cleaning pulse waveform 300 is generally applied to the substrateprior to beginning the plating process, i.e., cleaning pulse waveform300 is generally applied to the substrate prior to applying a currentdensity to the substrate sufficient to cause accumulation of the platingmaterial thereon. Therefore, for example, cleaning pulse waveform 300 isgenerally applied to the substrate either during the substrate loadingprocess, or alternatively, immediately after the substrate is loadedinto the plating chamber and contacted by the electrolyte.

[0026] In order to maintain seed layer integrity, a system controllergenerally controls the magnitude and duration of the respective pulses.For example, in order to keep from damaging the seed layer during theetching process, i.e., during the application of the cathodic pulsesthat are configured to etch contaminants from the surface of the seedlayer, the magnitude and duration of the anodic pulse may be carefullycontrolled. More particularly, assuming that a 200 mm substrate is beingprocessed, for example, the current density of the etch pulses may becontrolled to be approximately 111.5 mA/cm², which will generallyproduce an etch rate of approximately 409 Å/second (36.7×111.5/10=409).Therefore, inasmuch as the total time for each individual etch pulse isapproximately 20 milliseconds, each pulse will generally etchapproximately 8.2 Å (409×20/1000) of the material on the seed layer.Therefore, if five etch pulses are used, then approximately 41 Å ofcontaminants may be removed from the seed layer. It the layer ofcontaminants has a thickness of less than 41 Å, then the etching pulseswill begin to etch into the seed layer.

[0027] Similarly, the deposition rate of the cathodic pulses may also becalculated and utilized to determine when to stop etching so that theseed layer will not be damaged. For example, again assuming a 200 mmsubstrate, a deposition current density of 5 mA/cm² may be used, whichmay generally generate a deposition rate of about 18.35 Å/sec(36.7×5/10=18.35). Therefore, inasmuch as the total deposition pulsetime may generally be about 500 milliseconds, the deposition for onepulse may be about 9.2 Å. These calculations, both for the anodic andcathodic pulses, maybe used to determine the amplitude and duration ofthe respective pulses that is optimal for a particular configuration.For example, if a particular configuration requires that a certainthickness of contaminants be removed from a seed layer surface, i.e., ifsubstrate inspection processes such as metrology, for example, determinethe thickness of a contamination layer, then the appropriate amplitudeand duration of both the anodic and cathodic pulses may be calculated toremove the desired thickness of contaminants, without damaging theunderlying seed layer. This calculation may be manually entered into asystem controller configured to monitor and control the respectivepulses, or alternatively, a system controller may be configured toautomatically calculate the appropriate amplitude and duration of therespective pulses given either a user input or a measurement inputrepresenting the thickness of a layer of contaminants on the seed layer.As such, the above noted exemplary calculations are not in any way meantto be limiting upon the scope of the invention. Rather, the exemplarycalculations are intended to be merely illustrative of an exemplaryprocess for calculating the removal and deposition rates of therespective pulses. These calculations may then be used to determine theappropriate amplitude in duration of cleaning waveform pulses to beapplied in a plating system.

[0028] The end result of the application of the cleaning waveform isthat organic contaminants residing on the surface of the seed layer maybe removed therefrom prior to initiating plating operations. Further,inasmuch as the cleaning waveform is applied for a relatively shortperiod of time, i.e., generally much less than one minute, theregenerally is not any substantial etching of the seed layer, however, thesudden high current density of the anodic pulse operates to repel anddesorb organics at the seed layer surface. As a result thereof, organiccontaminants on the seed layer may be removed to the application of thecleaning waveform prior to plating, and more particularly, through theapplication of the high current density short duration anodic pulsesprior to plating.

[0029] Once the substrate loading process is complete and the cleaningwaveform 302 has been applied to the substrate to remove organiccontamination from the surface thereof, the remainder of thesemiconductor processing recipe 300 may be executed. The remainder ofrecipe 300, which is designated as 305 in FIG. 3, may include one ormore recipe steps having an increased current density or voltage appliedthereto for the purpose of facilitating plating on the substrate. Oncethe plating steps 305 are concluded, then the substrate having theplated layer deposited thereon may be removed from the plating apparatusas a finished substrate.

[0030]FIGS. 4A through 4D illustrate additional embodiments for thecleaning pulse waveform of the invention. In FIG. 4A, for example,cleaning pulse waveform 400 includes a plurality of positive or anodicwaveform pulses 401 that use the load voltage 402 as a baseline voltage.As such, each of the anodic pulses 401 extend upwardly towards thepositive voltage region of the graph illustrated in FIG. 4A. Although 5anodic pulses 401 are illustrated in FIG. 4A, the present inventioncontemplates that between about 10 and about 100 anodic pulses may beimplemented in the cleaning pulse waveform 400. Additionally, the pulseduration of each of the anodic pulses 401 may be between about 5milliseconds and about 30 milliseconds, for example. More particularly,the pulse duration of each of the anodic pulses 401 may be between about10 and about 20 milliseconds. The amplitude of the anodic pulses 401 isgenerally configured to be a large magnitude of current density appliedduring a very short time duration, which generally provides fordesorption of organic contamination from the seed layer surface. Assuch, the current density of anodic pulses for one may be as high asabout 100 mA/cm², for example. However, the current density of anodicpulses for one may be between about 10 mA/cm² and about 60 mA/cm², orbetween about 15 mA/cm² and about 30 mA/cm², for example.

[0031]FIG. 4B illustrates another embodiment of a cleaning pulsewaveform 400. In this embodiment, waveform 400 generally includes awaveform of anodic pulses 401, wherein the magnitude of the anodicpulses 401 begins at a first current density 403 and ends at a secondcurrent density 404, and descends from the first current density 403 tothe second current density 404 during the progression of the waveform400. Thus, the magnitude of the first anodic pulse 401 in waveform 400may be up to about 100 milliamps, for example, while the magnitude ofthe last anodic pulse 401 in waveform 400 may be only about 20milliamps, for example. In this configuration, the interstitial pulsesmay gradually decrease from the first current density to the lastcurrent density in either a linear or a nonlinear manner, as preferredby the specific implementation. In similar fashion to the previousembodiment, the pulse duration of anodic pulses for one may be betweenabout 5 milliseconds and about 100 milliseconds, for example, dependingon the implementation. However, the pulse duration of anodic pulses 401may be between about 10 and about 20 milliseconds, for example.

[0032]FIG. 4C illustrates another embodiment of a cleaning pulsewaveform 400. In this embodiment, from the magnitude of anodic pulses401 begins at the first magnitude 403, decreases to a middle magnitude405, and then increases to a second magnitude 404, wherein the secondmagnitude may be approximately equal to the first magnitude 403. In thisconfiguration, the magnitude of the anodic pulses 401 may be up to about100 milliamps, and the duration of the individual pulses may be betweenabout 5 milliseconds and about 100 milliseconds, wherein the preferredduration may be between about 10 milliseconds and about 30 milliseconds,for example. FIG. 4D illustrates another embodiment of a cleaning pulsewaveform 400, however, in this embodiment the magnitude of theindividual anodic pulses 401 is opposite of the waveform illustrated inFIG. 4C. For example, in FIG. 4D, the anodic pulses 401 may begin at afirst magnitude 403, increased to a middle magnitude 405, and indecrease to a second magnitude 404.

[0033] The exemplary cleaning pulse waveforms 400 illustrated in FIGS.4A 4D generally includes anodic pulses 401, i.e., positive pulses.Therefore, organic contamination on the surface of the seed layer is notremoved via an etch process, as the anodic/positive pulses 401 did notcause an etching process. Rather, experimental data indicates that thepositive anodic pulses applied to the substrate may operate to generateoxygen at the surface of the seed layer. This oxygen may then operate toattack or break up the organics attached to the seed layer by reducingthe adhesion between the seed layer and the organic. Therefore, thecleaning pulse waveform 400 using positive/anodic pulses 401 is alsoeffective in removing organic contaminants from the surface of the seedlayer. Additionally, experimental data indicates that the sudden changein charge resulting from the cleaning pulse waveform 400 also operatesto dissolve organic material residing on the surface of the seed layer.

[0034] While the foregoing is directed to embodiments of the presentinvention, other and further embodiments of the invention may be devisedwithout departing from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

1. A method for cleaning organic contaminants from a copper seed layerin an electrochemical plating system, comprising: applying a pluralityof anodic pulses to the seed layer prior to an electrochemicaldeposition process and subsequent to the seed layer contacting a platingsolution; and applying a cathodic pulse to the seed layer immediatelyfollowing each of the plurality of anodic pulses.
 2. The method of claim1, wherein an amplitude of a current density of each of the plurality ofanodic pulses is between about 50 mA/cm² and about 150 mA/cm².
 3. Themethod of claim 1, wherein an amplitude of a current density of each ofthe plurality of anodic pulses is between about 75 mA/cm² and about 125mA/cm².
 4. The method of claim 1, wherein a duration of each of theplurality of anodic pulses is between about 5 milliseconds and about 50milliseconds.
 5. The method of claim 1, wherein a duration of each ofthe plurality of anodic pulses is between about 10 milliseconds andabout 20 milliseconds.
 6. The method of claim 1, wherein an amplitude ofa current density for the cathodic pulse is between about 75 mA/cm² andabout 125 mA/cm².
 7. The method of claim 1, wherein an amplitude of acurrent density for the cathodic pulse is between about 90 mA/cm² andabout 100 mA/cm².
 8. The method of claim 1, wherein a duration of thecathodic pulse is between about 10 milliseconds and about 100milliseconds.
 9. The method of claim 1, wherein a duration of thecathodic pulse is at least five times a duration of each of theplurality of anodic pulses.
 10. The method of claim 1, wherein theplurality of anodic pulses comprises between about 2 and about 10 anodicpulses.
 11. The method of claim 1, wherein the plurality of anodicpulses comprises between about 3 and about 6 anodic pulses.
 12. A methodfor removing organic contamination from a copper seed layer overlyingsub-quarter micron sized features formed onto a semiconductor substratein an electrochemical plating system, the method comprising applying acleaning waveform to the seed layer once the seed layer is immersed inan electrolyte solution, the cleaning waveform comprising: at least onedeposition pulse; and at least one etch pulse, wherein the at least onedeposition pulse has a long duration low magnitude positive currentdensity, and wherein the at least one etch pulse has a short durationhigh magnitude negative current density.
 13. The method of claim 12,wherein the long duration low magnitude positive current densitydeposition pulse further comprises a deposition pulse having a currentdensity of between about 50 mA/cm² and about 125 mA/cm² and a durationof between about 10 milliseconds and about 150 milliseconds.
 14. Themethod of claim 12, wherein the short duration high magnitude negativecurrent density etch pulse further comprises an etch pulse having acurrent density of between about 50 mA/cm² and about 150 mA/cm² and aduration of between about 10 milliseconds and about 50 milliseconds. 15.The method of claim 13, wherein the current density is between about 75mA/cm² and about 100 mA/cm².
 16. The method of claim 13, wherein theduration is between about 50 milliseconds and about 150 milliseconds.17. The method of claim 14, wherein the current density is between about75 mA/cm² and about 125 mA/cm².
 18. The method of claim 14, wherein theduration is between about 10 milliseconds and about 30 milliseconds. 19.The method of claim 12, wherein the at least one deposition pulsecomprises between about 3 and about 10 deposition pulses.
 20. The methodof claim 12, wherein the at least one etch pulse comprises between about3 and about 10 etch pulses.
 21. A method for electrochemically platingcopper onto a seed layer, comprising: immersing the seed layer in aplating solution while applying an electrical loading bias to the seedlayer; applying a cleaning waveform to the seed layer prior toinitiating plating operations, the cleaning waveform comprising: aplurality of cathodic pulses; and a plurality of anodic pulses, theplurality of anodic pulses having a short duration and high currentdensity; and applying a electrical plating bias to the seed layer toplate copper thereon.
 22. The method of claim 21, wherein each of theplurality of cathodic pulses comprises a deposition pulse having aduration of between about 10 milliseconds and about 100 milliseconds anda current density of between about 75 mA/cm² and about 125 mA/cm². 23.The method of claim 21, wherein each of the plurality of anodic pulsescomprises an etch pulse having a duration of between about 5milliseconds and about 20 milliseconds and a current density of betweenabout 75 mA/cm² and about 125 mA/cm².
 24. The method of claim 21,wherein the plurality of anodic pulses comprises between about 2 andabout 10 anodic pulses and wherein the plurality of cathodic pulsescomprises between about 2 and about 10 cathodic pulses.
 25. A method forcleaning contaminants from a copper seed layer, comprising alternatingthe application of an anodic pulse and a cathodic pulse, wherein thecathodic pulses have a duration of between about 10 milliseconds andabout 100 milliseconds and a current density of between about 75 mA/cm²and about 125 mA/cm², and wherein the anodic pulses have a duration ofbetween about 5 milliseconds and about 20 milliseconds and a currentdensity of between about 75 mA/cm² and about 125 mA/cm², the alternatingapplication of the anodic pulse and the cathodic pulse occurring priorto commencing a plating process on the seed layer.
 26. The method ofclaim 25, wherein the alternating cathodic pulse and anodic pulsecomprises between about 4 and about 20 total pulses.
 27. Anelectrochemical plating cell, comprising: a plating cell containerconfigured hold a plating solution therein; a pivotally mounted lidmember configured to support a substrate on a lower surface thereof suchthat the substrate is in electrical communication with a contact ring;and a power supply in electrical communication with the contact ring,the power supply being configured to apply a plurality of anodic pulsesto a seed layer deposited on the substrate prior to an electrochemicaldeposition process and subsequent to the seed layer contacting a platingsolution and apply a cathodic pulse to the seed layer immediatelyfollowing each of the plurality of anodic pulses.
 28. Theelectrochemical plating cell of claim 27, wherein the power supply isconfigured to generate an amplitude of between about 50 mA/cm² and about150 mA/cm² for each of the plurality of anodic pulses.
 29. Theelectrochemical plating cell of claim 27, wherein the power supply isconfigured to generate a duration of between about 5 milliseconds andabout 50 milliseconds between each of the plurality of anodic pulses.29. The electrochemical plating cell of claim 27, wherein the powersupply is configured to generate an amplitude of between about 75 mA/cm²and about 125 mA/cm² for each of the cathodic pulses.
 30. Theelectrochemical plating cell of claim 27, wherein a duration of thecathodic pulse is at least five times a duration of each of theplurality of anodic pulses.
 31. An electrochemical plating cell,comprising: a plating cell container configured hold a plating solutiontherein; a pivotally mounted lid member configured to support asubstrate on a lower surface thereof such that the substrate is inelectrical communication with a contact ring; means for applying aplurality of anodic pulses to a seed layer deposited on the substrateprior to an electrochemical deposition process and subsequent to theseed layer contacting a plating solution; and means for applying acathodic pulse to the seed layer immediately following each of theplurality of anodic pulses.
 32. The electrochemical plating cell ofclaim 31, wherein the means for applying comprises a power supply inelectrical communication with a system controller configured to controlthe operation of the power supply.